Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform-Reference-Cited by-同舟云学术

Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform

Published:2019-02-04 Issue:5 Volume:114 Page:053107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kern L.-M.¹^ORCID,Galceran R.¹,Zatko V.¹,Galbiati M.¹,Godel F.¹,Perconte D.¹,Bouamrane F.¹,Gaufrès E.²,Loiseau A.²,Brus P.³,Bezencenet O.³,Martin M.-B.³,Servet B.³,Petroff F.¹^ORCID,Dlubak B.¹^ORCID,Seneor P.¹

Affiliation:

1. Unité Mixte de Physique, CNRS, Thales, University Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France

2. Laboratoire d'Étude des Microstructures (LEM), CNRS, ONERA, Université Paris-Saclay, 92322 Châtillon, France

3. Thales Research and Technology, 1 avenue Augustin Fresnel, 91767 Palaiseau, France

Funder

ANR EPOS-BP

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5086840

Reference33 articles.

1. Spin properties of black phosphorus and phosphorene, and their prospects for spincalorics

2. Black phosphorus field-effect transistors

3. Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties

4. Achieving Ultrahigh Carrier Mobility in Two-Dimensional Hole Gas of Black Phosphorus

5. The renaissance of black phosphorus

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