Artificial Graphene Spin Polarized Electrode for Magnetic Tunnel Junctions-Reference-Cited by-同舟云学术

Artificial Graphene Spin Polarized Electrode for Magnetic Tunnel Junctions

Published:2022-12-19 Issue:1 Volume:23 Page:34-41
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zatko Victor¹^ORCID,Galceran Regina¹²,Galbiati Marta¹,Peiro Julian¹,Godel Florian¹^ORCID,Kern Lisa-Marie¹^ORCID,Perconte David¹,Ibrahim Fatima³,Hallal Ali³,Chshiev Mairbek³⁴^ORCID,Martinez Benjamin⁵,Frontera Carlos⁵^ORCID,Balcells Lluìs⁵,Kidambi Piran R.⁶^ORCID,Robertson John⁷,Hofmann Stephan⁷^ORCID,Collin Sophie¹,Petroff Frédéric¹,Martin Marie-Blandine¹,Dlubak Bruno¹^ORCID,Seneor Pierre¹

Affiliation:

1. Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France

2. CSIC and BIST, Campus UAB, Catalan Institute of Nanoscience and Nanotechnology (ICN2), Bellaterra, 08193Barcelona, Spain

3. Univ. Grenoble Alpes, CEA, CNRS, Spintec, 38000Grenoble, France

4. Institut Universitaire de France, 75231Paris, France

5. Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193Bellaterra, Spain

6. Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, Tennessee37212, United States

7. Department of Engineering, University of Cambridge, CambridgeCB3 0FA, United Kingdom

Funder

European Union

EPSRC

French National Research Agency

European Union???s H2020 Future and Emerging Technologies Graphene Flagship

Spanish ministry of Science and Innovation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c03113

Reference54 articles.

1. Basic principles of STT-MRAM cell operation in memory arrays

2. Opportunities and challenges for spintronics in the microelectronics industry

3. Proposal for an all-spin logic device with built-in memory

4. Scalable energy-efficient magnetoelectric spin–orbit logic

5. Integer factorization using stochastic magnetic tunnel junctions

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