Band bending and surface defects in β-Ga2O3-Reference-Cited by-同舟云学术

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Band bending and surface defects in β-Ga2O3

Published:2012-04-30 Issue:18 Volume:100 Page:181602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lovejoy T. C.,Chen Renyu,Zheng X.,Villora E. G.,Shimamura K.,Yoshikawa H.,Yamashita Y.,Ueda S.,Kobayashi K.,Dunham S. T.,Ohuchi F. S.,Olmstead M. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4711014

Reference18 articles.

1. Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals

2. ORIGIN OF THE BLUE LUMINESCENCE OF β-Ga2O3

3. Discovery-based design of transparent conducting oxide films

4. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

5. Oxygen vacancies and donor impurities in β-Ga2O3

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