Characterization of InP/GaAs epilayers grown on Si substrates by low‐pressure organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99260
Reference13 articles.
1. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
2. High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface
3. Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
4. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
5. Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate
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1. Comparison of growth structures for continuous-wave electrically pumped 155 μm quantum dash lasers grown on (001) Si;Photonics Research;2020-11-20
2. Influence of the nucleation and annealing conditions on the quality of InP layers grown on GaAs by MOCVD;Journal of Crystal Growth;1991-11
3. Observation of the first-order phase transition from single to double stepped Si (001) in metalorganic chemical vapor deposition of InP on Si;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-07
4. Low‐temperature metalorganic chemical vapor deposition of InP on Si(001);Applied Physics Letters;1991-01-21
5. Relaxed lattice-mismatched growth of III–V semiconductors;Progress in Crystal Growth and Characterization of Materials;1991-01
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