Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE-Reference-Cited by-同舟云学术

Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE

Published:2021-11-01 Issue:11 Volume:11 Page:115323
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Chou Ta-Shun¹^ORCID,Seyidov Palvan¹^ORCID,Bin Anooz Saud¹^ORCID,Grüneberg Raimund¹,Tran Thi Thuy Vi¹,Irmscher Klaus¹^ORCID,Albrecht Martin¹^ORCID,Galazka Zbigniew¹^ORCID,Schwarzkopf Jutta¹^ORCID,Popp Andreas¹^ORCID

Affiliation:

1. Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, Germany

Funder

Bundesministerium für Bildung und Forschung

Deutsche Forschungsgemeinschaft

European Regional Development Fund

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0069243

Reference50 articles.

1. Brillouin zone and band structure of β-Ga2O3

2. Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors

3. Scaling-Up of Bulk β-Ga2O3Single Crystals by the Czochralski Method

4. Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides

5. Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal

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