Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN∕GaN light emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2831226
Reference13 articles.
1. Electron transport mechanism in gallium nitride
2. Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes
3. The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes
4. Optical and electrical properties of homoepitaxially grown multiquantum well InGaN/GaN light-emitting diodes
5. Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaNp-njunction diodes
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1. Carrier distributions in InGaN/GaN light-emitting diodes;physica status solidi (b);2014-12-29
2. Efficiency droop in blue InGaN/GaN single-quantum-well light-emitting diodes on the Si substrate;Semiconductor Science and Technology;2012-03-05
3. A new approach to correlate transport processes and optical efficiency in GaN-based LEDs;Journal of Physics D: Applied Physics;2009-01-30
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