Optical and electrical properties of homoepitaxially grown multiquantum well InGaN/GaN light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1616637
Reference20 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
3. Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition
4. Blue Laser on High N2Pressure-Grown Bulk GaN
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