Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1377858
Reference16 articles.
1. Thickness Dependence of Electronic Properties of GaN Epi-layers
2. Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
3. Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system
4. Impurity contamination of GaN epitaxial films from the sapphire, SiC and ZnO substrates
5. Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy
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1. Mechanism of high conduction on the N polar face of GaN;Journal of Applied Physics;2022-06-21
2. Using nanoindentation and cathodoluminescence to identify the bundled effect of gallium nitride grown by PA-MBE;Journal of Alloys and Compounds;2017-02
3. Cathodoluminescence in Scanning and Transmission Electron Microscopies;In-Situ Electron Microscopy;2012-04-24
4. Applications of depth-resolved cathodoluminescence spectroscopy;Journal of Physics D: Applied Physics;2012-04-12
5. Unintentional doping in GaN;Physical Chemistry Chemical Physics;2012
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