Unintentional doping in GaN
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2012/CP/C2CP40998D
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1. Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
2. Microstructural origins of localization in InGaN quantum wells
3. Effect of threading defects on InGaN∕GaN multiple quantum well light emitting diodes
4. UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density
5. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
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