Optical spectroscopy of single InAs/InGaAs quantum dots in a quantum well
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1529315
Reference18 articles.
1. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
2. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
3. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
4. Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm
5. Optical properties of multiple layers of self-organized InAs quantum dots emitting at 1.3 μm
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3. Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits;Nanotechnology;2013-05-15
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