Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors-Reference-Cited by-同舟云学术

Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

Published:2014-10-21 Issue:15 Volume:116 Page:154508
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liu Kuan-Hsien¹,Chang Ting-Chang²³,Chou Wu-Ching¹,Chen Hua-Mao⁴,Tsai Ming-Yen⁵,Wu Ming-Siou⁶,Hung Yi-Syuan⁶,Hung Pei-Hua⁵,Hsieh Tien-Yu²,Tai Ya-Hsiang⁴,Chu Ann-Kuo⁵,Yeh Bo-Liang⁷

Affiliation:

1. Department of Electrophysics, National Chiao Tung University, Hsin-chu 300, Taiwan

2. Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

3. Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan

4. Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-chu 300, Taiwan

5. Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

6. Department of Electronics Engineering, National Chiao Tung University, Hsin-Chu 300, Taiwan

7. Advanced Display Technology Research Center, AU Optronics, No.1, Li-Hsin Rd. 2, Hsinchu Science Park, Hsin-Chu 30078, Taiwan

Funder

National Science Council Taiwan (NSC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4897236

Reference60 articles.

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2. On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs

3. Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation

4. Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

5. Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

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