Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation-Reference-Cited by-同舟云学术

Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

Published:2015-03-02 Issue:9 Volume:106 Page:092103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Guoming¹²,Long Shibing¹,Yu Zhaoan¹,Zhang Meiyun¹,Ye Tianchun¹,Li Yang¹,Xu Dinglin¹,Lv Hangbing¹,Liu Qi¹,Wang Ming¹,Xu Xiaoxin¹,Liu Hongtao¹,Yang Baohe²,Suñé Jordi³,Liu Ming¹

Affiliation:

1. Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

2. Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, China

3. Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain

Funder

CAS Visiting Professorship for Senior International Scients

DIRSI of the Generalitat de Catalunya

MOST of China

NSFC

Spanish Ministry of Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4907604

Reference37 articles.

1. Nanoionics-based resistive switching memories

2. Memristive devices for computing

3. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

4. Metal–Oxide RRAM

5. On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

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