Stable and Repeatable Zro2 Rram Achieved by Nio Barrier Layer for Negative Set Phenomenon Elimination
Author:
Publisher
Elsevier BV
Reference46 articles.
1. Investigation of Microwave Annealing on Resistive Random Access Memory Device with Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Deposited IGZO Layer;C-H Wu;J Nanosci Nanotechnol,2020
2. Electrode-controlled confinement of conductive filaments in a nanocolumn embedded symmetric-asymmetric RRAM structure;Xiao W Song;J Mater Chem C,2020
3. VSDCA: A Voltage Sensing Differential Column Architecture Based on 1T2R RRAM Array for Computing-in-Memory Accelerators;Z Jing;Ieee T Circuits-I,2022
4. Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices;R Mroczy;Solid-State Electron,2022
5. Correlation of natural honey-based RRAM processing and switching properties by experimental study and machine learning;B Sueoka;Solid-State Electron,2022
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3