Stable and Repeatable Zro2 Rram Achieved by Nio Barrier Layer for Negative Set Phenomenon Elimination

Author:

Sun Tangyou,Yu Fantao,Li Chengcheng,Ning Taohua,LIU XINGPENG,Xu Zhimou,Yu Zhiqiang,Li Haiou,Zhang Fabi,Liao Qing

Publisher

Elsevier BV

Reference46 articles.

1. Investigation of Microwave Annealing on Resistive Random Access Memory Device with Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Deposited IGZO Layer;C-H Wu;J Nanosci Nanotechnol,2020

2. Electrode-controlled confinement of conductive filaments in a nanocolumn embedded symmetric-asymmetric RRAM structure;Xiao W Song;J Mater Chem C,2020

3. VSDCA: A Voltage Sensing Differential Column Architecture Based on 1T2R RRAM Array for Computing-in-Memory Accelerators;Z Jing;Ieee T Circuits-I,2022

4. Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices;R Mroczy;Solid-State Electron,2022

5. Correlation of natural honey-based RRAM processing and switching properties by experimental study and machine learning;B Sueoka;Solid-State Electron,2022

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