Effect of potential fluctuations on the transport properties and the photoconductivity of compensated semiconductors. Application to semi‐insulating GaAs. II. Excess carrier lifetimes and photoconductivity-Reference-Cited by-同舟云学术

Effect of potential fluctuations on the transport properties and the photoconductivity of compensated semiconductors. Application to semi‐insulating GaAs. II. Excess carrier lifetimes and photoconductivity

Published:1984-10-15 Issue:8 Volume:56 Page:2275-2283
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pistoulet B.,Girard P.,Hamamdjian G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.334261

Reference17 articles.

1. Photoelectronic properties of high‐resistivity GaAs : Cr

2. Photoelectronic properties of high‐resistivity GaAs : Cr

3. Photoelectronic investigations of semi-insulating p-type GaAs:Cr containing neutral chromium acceptors

4. The temperature dependence f photoconductivity in a-Si

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