Defects and radiation damage in semi-insulating GaAs radiation detectors
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference20 articles.
1. GaAs Detectors and Electronics for High-Energy Physics,1992
2. Evaluation of active layer properties and charge collection efficiency of GaAs particle detectors
3. Effect of potential fluctuations on the transport properties and the photoconductivity of compensated semiconductors. Application to semi‐insulating GaAs. II. Excess carrier lifetimes and photoconductivity
4. Interaction of deep levels and potential fluctuations in scattering and recombination phenomena in semi‐insulating GaAs
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1. Electron irradiation degradation on Silicon Schottky diode interface;2023-01-11
2. Semi-insulating GaAs detectors degraded by 8 MeV electrons up to 1500 kGy;Journal of Instrumentation;2021-12-01
3. Effects of electron irradiation and thermal annealing on characteristics of semi-insulating gallium-arsenide alpha-particle detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2020-07
4. Silicon strip and pixel detectors for particle physics experiments;Physics Reports;2019-10
5. Thermally stimulated currents in semi-insulating GaAs Schottky diodes and their simulation;Applied Physics A: Materials Science & Processing;1999-10-01
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