Boron contamination and antimony segregation at the interface of directly bonded silicon wafers

Author:

Widdershoven F. P.,Haisma J.,Naus J. P. M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Electrical and spectral characterization of CdS/Si heterojunction prepared by plasma-induced bonding;Optical and Quantum Electronics;2016-07-09

2. Characteristics of CdO—Si heterostructure produced by plasma-induced bonding technique;Proceedings of the Institution of Mechanical Engineers, Part L: Journal of Materials: Design and Applications;2008-01-01

3. Dynamics of interface traps in bonded silicon wafers;Semiconductor Science and Technology;2002-04-12

4. Contact bonding, including direct-bonding in a historical and recent context of materials science and technology, physics and chemistry;Materials Science and Engineering: R: Reports;2002-04

5. Plasma-assisted InP-to-Si low temperature wafer bonding;IEEE Journal of Selected Topics in Quantum Electronics;2002

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