Plasma-assisted InP-to-Si low temperature wafer bonding-Reference-Cited by-同舟云学术

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Plasma-assisted InP-to-Si low temperature wafer bonding

Published:2002 Issue:1 Volume:8 Page:118-131
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Pasquariello D.,Hjort K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/2944/21381/00991407.pdf?arnumber=991407

Cited by 187 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical Simulation of Waveguide Propagation Loss on Directly Bonded InP/Si Substrate;Journal of Electronic Materials;2024-07-16

2. Si/InP direct wafer bonding: A first-principles study;Computational Materials Science;2024-05

3. Interface characteristics of InP/Si heterojunction fabricated by low-temperature wafer bonding based on microcrystalline Ge interlayer;Vacuum;2024-05

4. Heterogeneously integrated InGaP/Si waveguides for nonlinear photonics;Optics Express;2024-04-23

5. InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer;Applied Physics Letters;2024-03-18

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