High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen-Reference-Cited by-同舟云学术

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High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen

Published:2018-11-05 Issue:19 Volume:113 Page:192102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tadjer Marko J.¹,Koehler Andrew D.¹,Freitas Jaime A.²,Gallagher James C.³,Specht Matty C.³^ORCID,Glaser Evan R.²,Hobart Karl D.¹,Anderson Travis J.¹,Kub Fritz J.¹,Thieu Quang T.⁴,Sasaki Kohei⁴⁵^ORCID,Wakimoto Daiki⁴⁵,Goto Ken⁴⁵,Watanabe Shinya⁴⁵,Kuramata Akito⁴⁵

Affiliation:

1. Power Electronics Branch, U.S. Naval Research Laboratory, Washington, DC 20375, USA

2. Electronic Materials Branch, U.S. Naval Research Laboratory, Washington, DC 20375, USA

3. American Society for Engineering Education, Washington, DC 20036, USA

4. Novel Crystal Technology, Sayama-City, Saitama 350-1328, Japan

5. Tamura Corporation, Sayama-City, Saitama 350-1328, Japan

Funder

ONR Global

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5045601

Reference43 articles.

1. Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

2. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

4. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

5. Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

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1. Potential design strategy of wide-bandgap semiconductor p-type β-Ga₂O₃;Semiconductor Science and Technology;2024-02-23

2. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga₂O₃:N with high mobility;Applied Physics Letters;2022-11-07

3. Minority-carrier dynamics in β-gallium oxide probed by depth-resolved cathodoluminescence;Journal of Physics D: Applied Physics;2022-09-23

4. Perspective on atomic scale investigation of point and extended defects in gallium oxide;Journal of Applied Physics;2022-05-21

5. Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers;Materials Science in Semiconductor Processing;2022-02

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