Compositional bowing of band energies and their deformation potentials in strained InGaAs ternary alloys: A first-principles study-Reference-Cited by-同舟云学术

Compositional bowing of band energies and their deformation potentials in strained InGaAs ternary alloys: A first-principles study

Published:2015-08-10 Issue:6 Volume:107 Page:062104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Khomyakov Petr A.¹,Luisier Mathieu¹^ORCID,Schenk Andreas¹

Affiliation:

1. Integrated Systems Laboratory, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, 8092 Zurich, Switzerland

Funder

European Commission (EC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4928539

Reference24 articles.

1. High-κ dielectrics and advanced channel concepts for Si MOSFET

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Considerations for Ultimate CMOS Scaling

4. Piezo-Electroreflectance in Ge, GaAs, and Si

5. Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machine learned environment-dependent corrections for a spds∗ empirical tight-binding basis;Machine Learning: Science and Technology;2024-05-09

2. Design of a Frequency Multiplier Based on Laterally Coupled Quantum Dots for Optoelectronic Device Applications in the Terahertz Domain: Impact of Inhomogeneous Indium Distribution, Strain, Pressure, Temperature, and Electric Field;Journal of Electronic Materials;2024-02-15

3. Atomic structures and electronic properties of molecular oxygen adsorption on In0.19Ga0.81As(100) surface: Ab-initio study combined with XPS/UPS analysis;Surface Science;2023-01

4. Adsorption of residual gas on the (001) surface of Cs/O co-sensitized In0.53Ga0.47As photocathode;Vacuum;2022-09

5. Lifetime Assessment of In _x Ga _{1−
x} As n‐Type Hetero‐Epitaxial Layers;physica status solidi (a);2022-06-19