Switching of deep levels in CuInSe2 due to electric field-induced Cu ion migration
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368651
Reference23 articles.
1. Study of the interface properties of CuInSe2 single-crystal heterojunctions and schottky barriers
2. Photoluminescence Studies and Solar-Cell Application of CuInSe2Thin Films Prepared using Selenization Techniques
3. Study of deep levels in CuInSe2 by deep level transient spectroscopy measurements on CdS/CuInSe2 solar cells
4. Deep-level transient spectroscopy of AlGaAs and CuInSe2
5. Majority and minority carrier traps in monocrystalline CulnSe2
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