Effect of the Electrodeposition Potential on the Physical Properties of Rapid Thermal Processing‐Annealed CuInSe2 Films

Abstract

Herein, the effect of the bath reference potential during the one‐step electrodeposition process of chalcopyrite CuInSe2 (CIS) films on “ITO‐coated glass” substrate is reported. Electrodeposited films are annealed by rapid thermal processing (RTP) under argon atmosphere. The deposition potential ranges between −0.85 and −0.65 V. The surface morphology and crystalline structure are investigated by scanning electron microscopy and X‐ray diffraction (XRD), respectively. Obtained results from XRD are supported by cyclic voltammetric measurements. Values of the extinction coefficient and refractive index are determined by fitting curves of theoretical reflectance and transmittance to experimental ones using the Fresnel matrix method. Results show that the deposition potential affects the physical properties of electrodeposited CIS films. Furthermore, using the Mott–Schottky analysis, it is shown it is possible to grow n‐ or p‐type CIS semiconductor by adjusting the cathodic voltage. This switching can be attributed to the effect of a metastable hole trap in CIS films.