Deep-level transient spectroscopy of AlGaAs and CuInSe2
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference9 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
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1. Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors;Journal of Applied Physics;2024-01-08
2. Deep defect levels in CuInSe2 single crystals using DLTS, MCTS and photoacoustic spectroscopy;Infrared Physics & Technology;2019-06
3. Study of deep hole trap levels associated with bias-induced metastabilities in Cu(In,Ga)Se2thin films using isothermal capacitance transient spectroscopy;Journal of Applied Physics;2014-02-07
4. Electrical Properties of I-III-VI2 Compounds;THIN FILM NANOSTRUCT;2010
5. A study of deep levels in bulk CuInSe2grown by THM METHOD;Japanese Journal of Applied Physics;2000-01-01
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