Study of deep hole trap levels associated with bias-induced metastabilities in Cu(In,Ga)Se2thin films using isothermal capacitance transient spectroscopy-Reference-Cited by-同舟云学术

Study of deep hole trap levels associated with bias-induced metastabilities in Cu(In,Ga)Se2thin films using isothermal capacitance transient spectroscopy

Published:2014-02-07 Issue:5 Volume:115 Page:054507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Okada Hiroshi,Minemoto Takashi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4864152

Reference34 articles.

1. Time‐dependent open‐circuit voltage in CuInSe2/CdS solar cells: Theory and experiment

2. The metastable changes of the trap spectra of CuInSe2‐based photovoltaic devices

3. Persistent photoconductivity in Cu(In,Ga)Se2 heterojunctions and thin films prepared by sequential deposition

4. Phase segregation, Cu migration and junction formation in Cu(In, Ga)Se2

5. Classification of metastabilities in the electrical characteristics of ZnO/CdS/Cu(In,Ga)Se2 solar cells

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1. Large metastability in Cu (In,Ga)Se 2 devices: The importance of buffer properties;Progress in Photovoltaics: Research and Applications;2019-06-26

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3. Improved open-circuit voltage in Cu(In,Ga)Se2 solar cells with high work function transparent electrodes;Journal of Applied Physics;2015-06-14

4. Behavior of deep level defects on voltage-induced stress of Cu(In,Ga)Se 2 solar cells;Thin Solid Films;2015-05