Heavily boron‐doped Si layers grown below 700 °C by molecular beam epitaxy using a HBO2source
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101763
Reference9 articles.
1. Boron heavy doping for Si molecular beam epitaxy using a HBO2source
2. Boron doping in Si molecular beam epitaxy by co‐evaporation of B2O3or doped silicon
3. Boron redistribution in doping superlattices grown by silicon molecular beam epitaxy using B2O3
4. Oxygen incorporation in molecular‐beam epitaxial silicon doped using a boric oxide source
5. Boron surface segregation in silicon molecular beam epitaxy
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1. Influence of boron-doped Si cap layer on the photoluminescence of β-FeSi2 particles embedded in Si matrix;Journal of Applied Physics;2003-08
2. Site preferences of oxygen and boron atoms during dissociative reaction of HBO2 molecules onto the Si(111)-7×7 surface;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-07
3. Intermediate structures appearing in the phase transition of Si(111)-7×7 to (√3×√3)R30° induced by HBO2 molecular irradiation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07
4. Selective chemical reaction of HBO2 molecules on the Si(111)-7×7 surface studied by scanning tunneling microscopy;Applied Surface Science;1998-06
5. Self-organized network structure appearing in the B/Si(111)-( $\sqrt{3}$]] × $\sqrt{3}$]] )R30° phase formation process studied by scanning tunneling microscopy;Applied Physics A: Materials Science & Processing;1998-03-01
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