Boron doping in Si molecular beam epitaxy by co‐evaporation of B2O3or doped silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96801
Reference8 articles.
1. Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy
2. A technique for rapidly alternating boron and arsenic doping in ion‐implanted silicon molecular beam epitaxy
3. Vaporization of Inorganic Substances: B2O3, TeO2 and Mg3N2
4. Solid Solubilities of Impurity Elements in Germanium and Silicon*
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