Influence of boron-doped Si cap layer on the photoluminescence of β-FeSi2 particles embedded in Si matrix
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1590065
Reference14 articles.
1. Optical properties of semiconducting iron disilicide thin films
2. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm
3. Electroluminescence of β-FeSi2Light Emitting Devices
4. Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region
5. Luminescence fromβ−FeSi2precipitates in Si. II: Origin and nature of the photoluminescence
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1. Room-Temperature 1.6 µm Electroluminescence fromp+-Si/β-FeSi2/n+-Si Diodes on Si(001) without High-Temperature Annealing;Applied Physics Express;2008-04-25
2. Semiconducting silicide photonic devices;SPIE Proceedings;2007-09-09
3. Photoluminescence decay time and electroluminescence of p-Si∕β-FeSi2 particles∕n-Si and p-Si∕β-FeSi2 film∕n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy;Journal of Applied Physics;2007-06-15
4. Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy;Thin Solid Films;2006-06
5. Epitaxial Growth and Luminescence Characterization of Si-based Double Heterostructures Light-emitting Diodes with Iron Disilicide Active Region;MRS Proceedings;2006
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