PN junction rectification in electrolyte gated Mg-doped InN-Reference-Cited by-同舟云学术

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PN junction rectification in electrolyte gated Mg-doped InN

Published:2011-09-05 Issue:10 Volume:99 Page:102106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Alarcón-Lladó E.,Mayer M. A.,Boudouris B. W.,Segalman R. A.,Miller N.,Yamaguchi T.,Wang K.,Nanishi Y.,Haller E. E.,Ager J. W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3634049

Reference22 articles.

1. Indium Nitride and Related Alloys

2. When group-III nitrides go infrared: New properties and perspectives

3. Intrinsic Electron Accumulation at Clean InN Surfaces

4. Sulfur passivation of InN surface electron accumulation

5. Reduced surface electron accumulation at InN films by ozone induced oxidation

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma-excited MBE—proposal and achievements through R&D of compound semiconductor materials and devices;Japanese Journal of Applied Physics;2022-01-01

2. Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy;Journal of Applied Physics;2018-03-07

3. Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy;Journal of Applied Physics;2017-03-07

4. Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors;ACS Applied Materials & Interfaces;2016-06-01

5. Carrier dynamics and related electronic band properties of InN films;Japanese Journal of Applied Physics;2014-09-26

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