Reduced surface electron accumulation at InN films by ozone induced oxidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2721365
Reference20 articles.
1. Low-field electron mobility in wurtzite InN
2. Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy
3. Improved Electrical Properties for Metalorganic Vapour Phase Epitaxial InN Films
4. Model for the thickness dependence of electron concentration in InN films
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2. Role of adsorbed water in inducing electron accumulation in InN;Journal of Applied Physics;2019-12-14
3. Sputtered growth of high mobility InN thin films on different substrates using Cu-ZnO buffer layer;Materials Science in Semiconductor Processing;2017-11
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