Evidence of the role of defects near the injecting interface in determining SiO2breakdown
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98925
Reference7 articles.
1. Hole trapping and breakdown in thin SiO2
2. Novel Mechanism for Tunneling and Breakdown of Thin SiO2Films
3. Electrical Breakdown in Thin Gate and Tunneling Oxides
4. Current andC‐Vinstabilities in SiO2at high fields
5. Electron trapping/detrapping within thin SiO2films in the high field tunneling regime
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