Breakdown of thin gate silicon dioxide films—A review-Reference-Cited by-同舟云学术

Breakdown of thin gate silicon dioxide films—A review

Published:1996-07 Issue:7-8 Volume:36 Page:871-905
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Nafría M.,Suñé J.,Aymerich X.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference105 articles.

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4. Theory of high-field conduction in a dielectric;O'Dwyer;J. Appl. Phys.,1969

5. Impact ionization model for dielectric instability and breakdown

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