Author:
Chen I.C.,Holland S.,Hu C.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
119 articles.
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1. Dielectric breakdown of oxide films in electronic devices;Nature Reviews Materials;2024-08-07
2. From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO₂ and HfO₂ Stacks;IEEE Transactions on Device and Materials Reliability;2024-06
3. References;Reliability Prediction for Microelectronics;2024-02-16
4. The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08
5. Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27