Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy-Reference-Cited by-同舟云学术

Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy

Published:2011-06-13 Issue:24 Volume:98 Page:243501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim SangHyeon,Yokoyama Masafumi,Taoka Noriyuki,Iida Ryo,Lee Sunghoon,Nakane Ryosho,Urabe Yuji,Miyata Noriyuki,Yasuda Tetsuji,Yamada Hisashi,Fukuhara Noboru,Hata Masahiko,Takenaka Mitsuru,Takagi Shinichi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3597228

Reference19 articles.

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3. Fluorine Incorporation in HfAlO Gate Dielectric for Defect Passivation and Effect on Electrical Characteristics of In[sub 0.53]Ga[sub 0.47]As n-MOSFETs

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