Growth of epitaxial NiSi2on Si(111) at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102385
Reference33 articles.
1. Atomic structure of the NiSi2/(111)Si interface
2. Direct determination of atomic structure at the epitaxial cobalt disilicide on (111) Si interface by ultrahigh resolution electron microscopy
3. Real-space determination of atomic structure and bond relaxation at theNiSi2-Si(111) interface
4. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
5. Diffusion in intermetallic compounds with the CaF2structure: A marker study of the formation of NiSi2thin films
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