Scanning capacitance microscopy on ultranarrow doping profiles in Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1613032
Reference6 articles.
1. Scanning capacitance microscope methodology for quantitative analysis of p-n junctions
2. High-resolution scanning capacitance microscopy of silicon devices by surface beveling
3. Gate oxide formation under mild conditions for scanning capacitance microscopy
4. Scanning capacitance microscopy measurements using diamond-coated probes
5. Contrast reversal in scanning capacitance microscopy imaging
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