1. Y. Shimojo, A. Konno, J. Nishimura, T. Okada, Y. Yamada, S. Kitazaki, H. Furuhashi, S. Yamazaki, K. Yahashi, K. Tomioka, Y. Minami, H. Kanaya, S. Shuto, K. Yamakawa, T. Ozaki, H. Shiga, T. Miyakawa, S. Shiratake, D. Takashima, I. Kunishima, T. Hamamoto, and A. Nitayama, “High-density and high-speed 128 Mb chain FeRAM™ with SDRAM-compatible DDR2 interface,” in Symposium on VLSI Technology (Japan Society of Applied Physics, 2009), pp. 218–219.
2. Domain-wall conduction in AFM-written domain patterns in ion-sliced LiNbO3 films
3. Electrical Tunability of Domain Wall Conductivity in LiNbO
3
Thin Films
4. Ferroelectric Domain Wall Memristor
5. Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers