High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4892918
Reference23 articles.
1. Carbon Nanotube Complementary Wrap-Gate Transistors
2. Carbon Nanotube Circuit Integration up to Sub-20 nm Channel Lengths
3. High-κ gate dielectrics: Current status and materials properties considerations
4. Rare-earth oxide thin films as gate oxides in MOSFET transistors
5. High-K dielectrics for the gate stack
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