Dislocation-induced fields in piezoelectric AlGaN/GaN bimaterial heterostructures
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4765722
Reference28 articles.
1. Thermodynamic and electrostatic analysis of threading dislocations in epitaxial ferroelectric films
2. Electron Holography Studies of the Charge on Dislocations in GaN
3. Determination by Electron Holography of the Electronic Charge Distribution at Threading Dislocations in Epitaxial GaN
4. Probing the electrostatic potential of charged dislocations inn−GaNandn−ZnOepilayers by transmission electron holography
5. Indentation plasticity of barium titanate single crystals: Dislocation influence on ferroelectric domain walls
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