Determination by Electron Holography of the Electronic Charge Distribution at Threading Dislocations in Epitaxial GaN
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. GaN microwave electronics
3. Spatial distribution of the luminescence in GaN thin films
4. Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
5. Electrical characterization of GaN p-n junctions with and without threading dislocations
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4. Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I;IEEE Transactions on Electron Devices;2021-07
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