Substrate heating and emitter dopant effects in laser‐annealed solar cells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92704
Reference11 articles.
1. p‐njunction formation in boron‐deposited silicon by laser‐induced diffusion
2. Electrical and structural characteristics of laser‐induced epitaxial layers in silicon
3. Pulsed laser techniques for solar cell processing
4. Laser processing in the preparation of silicon solar cells
5. Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group‐III and group‐V dopants in silicon
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3. The influence of nitrogen on laser doping from phosphorous doped a-SiNx layers;Solar Energy Materials and Solar Cells;2016-12
4. Boron Implanted, Laser Annealed p+ Emitter for n-type Interdigitated Back-contact Solar Cells;Energy Procedia;2014
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