Boron Implanted, Laser Annealed p+ Emitter for n-type Interdigitated Back-contact Solar Cells
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Elsevier BV
Reference15 articles.
1. Continued Development of All-Back-Contact Silicon Wafer Solar Cells at ANU;Zin;Energy Procedia,2012
2. High-Throughput Ion-Implantation for Low-Cost High-Efficiency Silicon Solar Cells;Rohatgi;Energy Procedia,2012
3. N-type silicon solar cells with implanted emitter;Hermle;26th European Photovoltaic Solar Energy Conference,2011
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Emitter Formation Using a Plasma Immersion Ion Implantation Process for Crystalline Silicon Solar Cells;Nanoscience and Nanotechnology Letters;2015-12-01
2. Advances in ion beam modification of semiconductors;Current Opinion in Solid State and Materials Science;2015-02
3. Ion-Implanted Laser-Annealed p+ and n+ Regions: A Potential Solution for Industrially Feasible High-Efficiency N-Type Interdigitated Back-Contact Solar Cells;IEEE Journal of Photovoltaics;2015-01
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