Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2402971
Reference29 articles.
1. Nitride Semiconductors and Devices
2. Atomic arrangement at the AlN/Si (111) interface
3. Electron microscopy characterization of GaN films grown by molecular-beam epitaxy on sapphire and SiC
4. Film/Substrate Orientation Relationship in theAIN/6H-SiC Epitaxial System
5. Growth of aluminum nitride thin films on Si(111) and Si(001): Structural characteristics and development of intrinsic stresses
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