Laser pulse shape dependence of poly-Si crystallization-Reference-Cited by-同舟云学术

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Laser pulse shape dependence of poly-Si crystallization

Published:2017-12 Issue:12 Volume:7 Page:125102
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Prudnikov Oleg N.¹²^ORCID,Shin Sung Tae³,Cheong Byoung-Ho³^ORCID

Affiliation:

1. Novosibirsk State University, ul. Pirogova 2, Novosibirsk 630090, Russia

2. Institute of Laser Physics, pr. Lavrenteva 15b, Novosibirsk 630090, Russia

3. Department of Applied Physics, Korea University, 2511 Sejong-ro, Sejong 30019, Republic of Korea

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4998221

Reference17 articles.

1. Dopant redistribution and electrical activation in silicon following ultra-low energy boron implantation and excimer laser annealing

2. New excimer‐laser‐crystallization method for producing large‐grained and grain boundary‐location‐controlled Si films for thin film transistors

3. Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films

4. Prospective crystallization of amorphous Si films for new Si TFTs

5. 13.1:Invited Paper: Excimer-Laser Annealing: Microstructure Evolution and a Novel Characterization Technique

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1. Optical tools for laser machining along six orders of magnitude;High-Power Laser Materials Processing: Applications, Diagnostics, and Systems XIII;2024-03-12

2. Surface wettability control on zircaloy-4 by nanosecond Nd:YAG laser with beam homogenizer;AIP Advances;2022-06-01

3. Study of the Change in Surface Wettability for Zircaloy-4 Utilizing Spatially Homogenized Nanosecond Laser Beam;Journal of Welding and Joining;2022-04-30

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