Prospective crystallization of amorphous Si films for new Si TFTs-Reference-Cited by-同舟云学术

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Prospective crystallization of amorphous Si films for new Si TFTs

Published:2008-08 Issue:10 Volume:5 Page:3259-3263
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Noguchi Takashi

Publisher

Wiley

Subject

Condensed Matter Physics

Reference27 articles.

1. S. Morozumi et al., Digest of SID, p. 156 (1983).

2. K. Kanzaki, Dig. of Technical Papers on AM-LCD 01, p. 71 (2001).

3. Comparison of effects between large-area-beam ELA and SPC on TFT characteristics

4. T. Noguchi, H. Tsukamoto, T. Suzuki, and H. Masuya, Ext. Abst. Int. Conf. SSDM, p. 620 (1991).

5. T. Urabe, T. Sasaoka, K. Tatsuki, and J. Takaki, Dig. of SID, p. 161 (2007).

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Periodic surface texturing of amorphous-Si thin film irradiated by UV nanosecond laser;Optical Materials Express;2019-10-10

2. Crystallization of amorphous‐Si using nanosecond laser interference method;Journal of the Society for Information Display;2018-11-16

3. Laser pulse shape dependence of poly-Si crystallization;AIP Advances;2017-12

4. Appearance of the p-channel performance of poly-Si TFTs with a metal S/D electrode using BLDA aiming for low-cost CMOS;Journal of Information Display;2017-10-02

5. On the transient amorphous silicon structures during solid phase crystallization;Journal of Non-Crystalline Solids;2013-03

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