Appearance of the p-channel performance of poly-Si TFTs with a metal S/D electrode using BLDA aiming for low-cost CMOS
Author:
Affiliation:
1. Faculty of Engineering, University of the Ryukyus, Nishihara, Japan
2. ULVAC Inc., Chigasaki, Japan
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,General Materials Science
Link
https://tandfonline.com/doi/pdf/10.1080/15980316.2017.1381650
Reference20 articles.
1. Low-Temperature Polycrystalline Silicon Thin-Film Transistors for Large-Area Liquid Crystal Display
2. Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits
3. Electrical Characteristics of Low-Temperature Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Thin-Film Transistors with Six-Step Photomask Structure
4. Prospective crystallization of amorphous Si films for new Si TFTs
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