Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Laser Processing-Reference-Cited by-同舟云学术

Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Laser Processing

Published:2020-11 Issue: Volume:312 Page:134-139
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Mitsai Eugeny¹,Dostovalov Alexander V.²,Bronnikov Kirill A.²,Nepomniaschiy Aleksandr Vladimirovich¹,Zhizhchenko Aleksey Y.¹,Kuchmizhak Aleksandr A.³

Affiliation:

1. Institute of Automation and Control Processes Far Eastern Branch of the Russian Academy of Sciences (IACP FEB RAS)

2. Institute of Chemistry FEB RAS

3. Institute of Automation and Control Processes of Far Eastern Branch of RAS

Abstract

We demonstrated efficient crystallization of amorphous Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of the laser-annealed film by atomic-force microscopy, Fourier-transform IR, Raman and energy dispersive X-ray spectroscopy as well as numerical modeling of optical spectra confirmed efficient crystallization of amorphous Si and high-quality of the obtained films opening pathway for applications in thin-film solar cells, transistors and displays.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.312.134.pdf

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