Atomically stepped, pseudomorphic, corundum-phase (Al1-xGax)2O3 thin films (0 ≤ x < 0.08) grown on R-plane sapphire
Author:
Affiliation:
1. Semiconductor Physics Group, Felix-Bloch-Institute for Solid State Physics, Universität Leipzig, Linnéstr. 5, D-04103 Leipzig, Germany
Funder
European Science Foundation
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5059374
Reference26 articles.
1. Growth of highly oriented γ- and α-Al2O3 thin films by pulsed laser deposition
2. Layer-by-layer growth of TiN by pulsed laser deposition onin-situannealed (100) MgO substrates
3. Epitaxial Al2O3 capacitors for low microwave loss superconducting quantum circuits
4. Bandgap engineering of α-(AlxGa1-x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law
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2. Flexible hardware concept of pulsed laser deposition for large areas and combinatorial composition spreads;Review of Scientific Instruments;2023-08-01
3. PLD of α-Ga2O3 on m-plane Al2O3: Growth regime, growth process, and structural properties;APL Materials;2023-06-01
4. Control of Al composition of mist chemical vapor deposition grown α-(AlGa)2O3 alloy thin films by acetylacetonation of Al ion;Japanese Journal of Applied Physics;2023-05-09
5. Realization of Conductive n‐Type Doped α ‐Ga 2 O 3 on m ‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process;physica status solidi (a);2023-01-04
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