Adsorption-controlled growth of homoepitaxial <i>c</i>-plane sapphire films-Reference-Cited by-同舟云学术

Adsorption-controlled growth of homoepitaxial c-plane sapphire films

Published:2024-09-01 Issue:9 Volume:12 Page:
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:

Author:

Majer Lena N.¹^ORCID,Acartürk Tolga¹^ORCID,van Aken Peter A.¹^ORCID,Braun Wolfgang¹^ORCID,Camuti Luca¹²^ORCID,Eckl-Haese Johan¹^ORCID,Mannhart Jochen¹^ORCID,Onuma Takeyoshi³^ORCID,Rabinovich Ksenia S.¹^ORCID,Schlom Darrell G.⁴⁵⁶^ORCID,Smink Sander¹^ORCID,Starke Ulrich¹^ORCID,Steele Jacob⁴^ORCID,Vogt Patrick¹⁷^ORCID,Wang Hongguang¹^ORCID,Hensling Felix V. E.¹⁴^ORCID

Affiliation:

1. Max Planck Institute for Solid State Research 1 , 70569 Stuttgart, Germany

2. Ludwig-Maximilians-Universität, Department of Chemistry 2 , 80539 Munich, Germany

3. Department of Applied Physics, Kogakuin University 3 , 2665-1, Hachioji, Tokyo 192-0015, Japan

4. Department of Materials Science and Engineering, Cornell University 4 , Ithaca, New York 14853, USA

5. Kavli Institute at Cornell for Nanoscale Science 5 , Ithaca, New York 14853, USA

6. Leibniz-Institut für Kristallzüchtung 6 , 12849 Berlin, Germany

7. Institut für Festkörperphysik, Universität Bremen 7 , 28359 Bremen, Germany

Abstract

Sapphire is a technologically highly relevant material, but it poses many challenges when performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. The films thus grown are atomically smooth, have a controlled termination, and are of outstanding crystallinity. Their chemical purity exceeds that of the substrates. The films exhibit exceptional optical properties, such as a single-crystal-like bandgap and a low density of F+ centers.

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0224092/20153529/091112_1_5.0224092.pdf

Reference74 articles.

1. Modern trends in crystal growth and new applications of sapphire;J. Cryst. Growth,2012

2. Dielectric properties of aluminum oxide films;J. Appl. Phys.,1978

3. Thermal conductivity of κ-Al2O3 and α-Al2O3 wear-resistant coatings;J. Appl. Phys.,1998

4. Properties of sapphire,2009

5. Silicon on sapphire (SOS) device technology;Oki Tech. Rev.,2004