Schottky barriers on anodic‐sulfide‐passivated GaAs and their stability
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359910
Reference19 articles.
1. Nearly ideal electronic properties of sulfide coated GaAs surfaces
2. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
3. Passivation of (NH4)2S‐treated GaAs surface with an As2S3film
4. Marked Reduction of the Surface/Interface States of GaAs by (NH4)2SxTreatment
5. A review of III–V semiconductor based metal-insulator-semiconductor structures and devices
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