A review of III–V semiconductor based metal-insulator-semiconductor structures and devices-Reference-Cited by-同舟云学术

A review of III–V semiconductor based metal-insulator-semiconductor structures and devices

Published:1993-08 Issue:1-2 Volume:231 Page:107-124
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Mui D.S.L.,Wang Z.,Morkoç H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference88 articles.

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4. Submicrometer self-aligned recessed gate InGaAs MISFET exhibiting high transconductance;Cheng;IEEE Electron Devices Lett.,1984

5. D. S. L. Mui, D. Biswas, A. L. Demirel, N. Teraguchi, Z. Wang, J. Reed and H. Morkoç, In situ deposited Si3N4/Si/In0.53Ga0.47As metal-insulator-semiconductor MISFETs with SiO2/Si like interface characteristics, Appl. Phys. Lett., in press.

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