Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density
Author:
Affiliation:
1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
2. JR Creighton Consulting LLC, Albuquerque, New Mexico 87111, USA
3. Taiyo Nippon Sanso Corporation, Shinagawa-ku, Tokyo 142-8558, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4984900
Reference18 articles.
1. Origin of forward leakage current in GaN-based light-emitting devices
2. Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes
3. Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy
4. Origin of hexagonal-shaped etch pits formed in (0001) GaN films
5. Defect-enabled electrical current leakage in ultraviolet light-emitting diodes
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3. Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine;Dalton Transactions;2021
4. Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification;Applied Surface Science;2020-07
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